Low-temperature synthesis of vertically aligned graphene through microwave-assisted chemical vapour deposition

نویسندگان

چکیده

The intrinsic properties of vertically aligned graphene (VG), such as a high ratio exposed active edge sites compared to inert basal sites, non-stacking morphology and large surface-to-volume make it applicable numerous advanced technologies sensors, flexible electronics fuel cells. Plasma-enhanced chemical vapour deposition has emerged promising technique synthesise at lower temperatures than conventional (CVD) process, providing better control over the parameters tailor properties. This study presents cost effective, scalable, single step synthesis quality VG low temperatures. samples were synthesised in microwave (MW) assisted CVD reactor, which allowed for decomposition CH4 H2 gas mixtures Ar carrier gas, growth directly onto Si wafer substrates without any additional heat applied substrate. Deposition conditions, MW power, ratio, substrate-to-plasma separation optimized morphology, rate electrochemical performance VG. physiochemical analysis revealed that fabricated consisted sp2 graphene, whilst cyclic voltammetry confirmed structures are electrochemically demonstrate typical characteristics quasi-reversible processes.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Low-temperature synthesis of graphene on Cu using plasma-assisted thermal chemical vapor deposition

Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD...

متن کامل

Copper-Assisted Direct Growth of Vertical Graphene Nanosheets on Glass Substrates by Low-Temperature Plasma-Enhanced Chemical Vapour Deposition Process

Vertical graphene (VG) nanosheets are directly grown below 500 °C on glass substrates by a one-step copper-assisted plasma-enhanced chemical vapour deposition (PECVD) process. A piece of copper foil is located around a glass substrate as a catalyst in the process. The effect of the copper catalyst on the vertical graphene is evaluated in terms of film morphology, growth rate, carbon density in ...

متن کامل

Low-temperature plasma enhanced chemical vapour deposition of carbon nanotubes

Vertically aligned carbon nanotubes were selectively grown at temperatures as low as 120 8C by plasma enhanced chemical vapour deposition. We investigated the effects of acetylene, ethylene and methane as carbon source gases together with ammonia as an etchant and nickel as catalyst material. The diluted acetylene plasma gave the highest nanotube growth rate and showed the most intense C Swan b...

متن کامل

Optimized Conditions for Catalytic Chemical Vapor Deposition of Vertically Aligned Carbon Nanotubes

Here, we have synthesized vertically aligned carbon nanotubes (VA-CNTs), using chemical vapor deposition (CVD) method. Cobalt and ethanol are used as the catalyst and the carbon source, respectively. The effects of ethanol flow rate, thickness of Co catalyst film, and growth time on the properties of the carbon nanotube growth are investigated. The results show that the flow rate of ethanol and...

متن کامل

Plasma Enhanced Chemical Vapour Deposition of Horizontally Aligned Carbon Nanotubes

A plasma-enhanced chemical vapour deposition reactor has been developed to synthesis horizontally aligned carbon nanotubes. The width of the aligning sheath was modelled based on a collisionless, quasi-neutral, Child's law ion sheath where these estimates were empirically validated by direct Langmuir probe measurements, thereby confirming the proposed reactors ability to extend the existing she...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Thin Solid Films

سال: 2021

ISSN: ['1879-2731', '0040-6090']

DOI: https://doi.org/10.1016/j.tsf.2021.138801